By R. M. Marston (Auth.)
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Extra info for 110 Semiconductor Projects for the Home Constructor
T h e value of R can b e varied from a b o u t 3 k£2 t o 5 0 0 k£2, so an attractive feature of t h e circuit is t h a t it can b e m a d e t o cover a f r e q u e n c y range greater t h a n 1 0 0 : 1 via a single variable resistance. F r e q u e n c y stability is g o o d w i t h changes in t e m p e r a t u r e , a n d is a b o u t 0 . 0 4 % / ° C . T h e m a i n cause of this variation is t h e change of a b o u t — 2 m V / ° C t h a t o c c u r s in t h e f o r w a r d volt d r o p of t h e Dl j u n c t i o n w i t h changes in t e m p e r a t u r e .
T h e 2 N 2 6 4 6 u . j . 1 a n d Fig. 3 show t h e general characteristics a n d lead c o n n e c t i o n s of this particular device. Wide-range pulse g e n e r a t o r Fig. 4 shows t h e practical circuit of a wide-range pulse generator. A large a m p l i t u d e +ve pulse is available across R , a n d a —ve pulse 4 across R ; b o t h pulses have an a m p l i t u d e of a b o u t half supply line 3 volts, are of similar f o r m , a n d are at a l o w i m p e d a n c e . With t h e c o m p o n e n t values s h o w n , t h e pulse w i d t h is c o n s t a n t at a b o u t 3 0 /isec over the frequency range 25 H z - 3 k H z (adjustable via Ri).
24 Time switch 110 SEMICONDUCTOR PROJECTS 27 Q charges e x p o n e n t i a l l y w i t h a t i m e c o n s t a n t t h a t can be varied via Rio T h e rising e x p o n e n t i a l voltage is applied t o Q 4 base, a n d a p p e a r s at t h e j u n c t i o n of R a n d R x n at a r e d u c e d a m p l i t u d e , a n d is t h e n a p p l i e d t o t h e base of Q l via R . 1 sec//xF value of C This delay can be increased, if r e q u i r e d , b y increasing t h e value h of Ri or r e d u c i n g t h e value of R .