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Extra resources for Advanced High Speed Devices
11 This work was conducted at low temperatures and indicated that ballistic transport between two lateral gates induced a steering effect that can direct current into one of two drains. The results of this work indicated that Y-branch style devices have a drain bias dependence on the overall transconductance, at least when operated in the ballistic regime. In our work, we strengthened the electric field in the device by adding a third drain terminal, combined with an asymmetric scattering object.
Device cross section for typical GaAs-based heterostructure material systems. k: the wave vectors of irradiated photons, Ex: the electric field (linear polarization), kTHz: the wave vector of electromagnetic radiation. Suppose that the grating gates have geometry with 300-nm G1 fingers and 100-nm G2 fingers to be aligned alternately with a space of 100 nm and that an appropriately high 2D electronic charge (~1012cm-2) is induced in the plasmon cavities under G1 while the regions under G2 are weakly charged (1010~1011cm-2).
Transconductance of the BDT shown in Figure 1 as a function of push-pull gate voltage with a 2V drain bias applied. In Figure 5 the transconductance as a function of gate voltage is plotted for a 2V bias. Drain bias affects transconductance performance, and this suggests that higher electric fields will produce devices with higher performance. Device scaling will enable designs that have higher electric fields as well as will ensure that a larger percentage of the electrons are being transported ballistically through the device rather than by drift.